BUK9508-55B,127 datasheet

О ДАТАШИТЕ

Маркировка

BUK9508-55B,127
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BUK9508-55B,127 Configuration: Single Continuous Drain Current: 110 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 45nC @ 5V Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1950634 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 203W Power Dissipation: 203000 mW Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.007 Ohms Fall Time: 86 ns Rise Time: 123 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 131 ns Part # Aliases: BUK9508-55B Other Names: 934057712127::BUK9508-55B::BUK9508-55B
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14 шт.
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